Raman studies of intrasubband plasmon dispersion for a single 2DEG under a Schottky gate

L. C.Ó Súilleabháin; H. P. Hughes; A. C. Churchill; D. A. Ritchie; M. Grimshaw; G. A.C. Jones

doi:10.1016/0038-1098(93)90587-D

Raman studies of intrasubband plasmon dispersion for a single 2DEG under a Schottky gate

L. C.Ó Súilleabháin
, H. P. Hughes
, A. C. Churchill
, D. A. Ritchie
, M. Grimshaw
, G. A.C. Jones

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report the first observations of Raman scattering from the collective intrasubband plasmons of a single two-dimensional electron gas (2DEG) at a GaAs/AlGaAs heterointerface with an overlaid Schottky gate. The momentum resolution of the Raman measurement is used to determine the dispersion relation for the 2DEG plasmon as a function of gate bias, which controls the 2DEG density. The experimental dispersion curves are compared with those derived from basic electromagnetic considerations for several models of the sample layer structure, and allow a direct determination of the 2DEG density as a function of gate bias.

Original language	English (US)
Pages (from-to)	517-521
Number of pages	5
Journal	Solid State Communications
Volume	87
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(93)90587-D
State	Published - Aug 1993
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(93)90587-D

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@article{fee0815cec1747a59df91b35523cabb9,

title = "Raman studies of intrasubband plasmon dispersion for a single 2DEG under a Schottky gate",

abstract = "We report the first observations of Raman scattering from the collective intrasubband plasmons of a single two-dimensional electron gas (2DEG) at a GaAs/AlGaAs heterointerface with an overlaid Schottky gate. The momentum resolution of the Raman measurement is used to determine the dispersion relation for the 2DEG plasmon as a function of gate bias, which controls the 2DEG density. The experimental dispersion curves are compared with those derived from basic electromagnetic considerations for several models of the sample layer structure, and allow a direct determination of the 2DEG density as a function of gate bias.",

author = "S{\'u}illeabh{\'a}in, \{L. C.{\'O}\} and Hughes, \{H. P.\} and Churchill, \{A. C.\} and Ritchie, \{D. A.\} and M. Grimshaw and Jones, \{G. A.C.\}",

year = "1993",

month = aug,

doi = "10.1016/0038-1098(93)90587-D",

language = "English (US)",

volume = "87",

pages = "517--521",

journal = "Solid State Communications",

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T1 - Raman studies of intrasubband plasmon dispersion for a single 2DEG under a Schottky gate

AU - Súilleabháin, L. C.Ó

AU - Hughes, H. P.

AU - Churchill, A. C.

AU - Ritchie, D. A.

AU - Grimshaw, M.

AU - Jones, G. A.C.

PY - 1993/8

Y1 - 1993/8

N2 - We report the first observations of Raman scattering from the collective intrasubband plasmons of a single two-dimensional electron gas (2DEG) at a GaAs/AlGaAs heterointerface with an overlaid Schottky gate. The momentum resolution of the Raman measurement is used to determine the dispersion relation for the 2DEG plasmon as a function of gate bias, which controls the 2DEG density. The experimental dispersion curves are compared with those derived from basic electromagnetic considerations for several models of the sample layer structure, and allow a direct determination of the 2DEG density as a function of gate bias.

AB - We report the first observations of Raman scattering from the collective intrasubband plasmons of a single two-dimensional electron gas (2DEG) at a GaAs/AlGaAs heterointerface with an overlaid Schottky gate. The momentum resolution of the Raman measurement is used to determine the dispersion relation for the 2DEG plasmon as a function of gate bias, which controls the 2DEG density. The experimental dispersion curves are compared with those derived from basic electromagnetic considerations for several models of the sample layer structure, and allow a direct determination of the 2DEG density as a function of gate bias.

UR - https://www.scopus.com/pages/publications/0027640850

UR - https://www.scopus.com/pages/publications/0027640850#tab=citedBy

U2 - 10.1016/0038-1098(93)90587-D

DO - 10.1016/0038-1098(93)90587-D

M3 - Article

AN - SCOPUS:0027640850

SN - 0038-1098

VL - 87

SP - 517

EP - 521

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Raman studies of intrasubband plasmon dispersion for a single 2DEG under a Schottky gate

Abstract

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