Electronic transport characteristics of electrolyte-gated conducting polyaniline nanowire field-effect transistors

Seung Yong Lee; Gyoung Rin Choi; Hyuneui Lim; Kyung Mi Lee; Sang Kwon Lee

doi:10.1063/1.3176444

Electronic transport characteristics of electrolyte-gated conducting polyaniline nanowire field-effect transistors

Seung Yong Lee, Gyoung Rin Choi, Hyuneui Lim, Kyung Mi Lee, Sang Kwon Lee

Melanoma Medical Oncology

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We investigate the electronic transport characteristics of an electrolyte-gated conducting polyaniline (PANI) nanowire field-effect transistor (FET) assembled between two Au electrodes on SiO₂ /Si substrate using nanochannel-assisted chemical oxidative polymerization. This is the first demonstration that the current-voltage characteristics for a PANI nanowire FET exhibit significant hysteresis, which is typically greater on the positive sweep of the potential than on the negative sweep. We suggest that this hysteresis is due to changes in the PANI structure and the effects of Coulombic repulsion in PANI nanowires on oxidation process. We also present degradation properties of PANI nanowire FETs with electrochemical gate potential.

Original language	English (US)
Article number	013113
Journal	Applied Physics Letters
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.3176444
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electronic transport characteristics of electrolyte-gated conducting polyaniline nanowire field-effect transistors",

abstract = "We investigate the electronic transport characteristics of an electrolyte-gated conducting polyaniline (PANI) nanowire field-effect transistor (FET) assembled between two Au electrodes on SiO2 /Si substrate using nanochannel-assisted chemical oxidative polymerization. This is the first demonstration that the current-voltage characteristics for a PANI nanowire FET exhibit significant hysteresis, which is typically greater on the positive sweep of the potential than on the negative sweep. We suggest that this hysteresis is due to changes in the PANI structure and the effects of Coulombic repulsion in PANI nanowires on oxidation process. We also present degradation properties of PANI nanowire FETs with electrochemical gate potential.",

author = "Lee, {Seung Yong} and Choi, {Gyoung Rin} and Hyuneui Lim and Lee, {Kyung Mi} and Lee, {Sang Kwon}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant funded by Korean Government (Grant No. KRF-2008-005-J00301).",

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T1 - Electronic transport characteristics of electrolyte-gated conducting polyaniline nanowire field-effect transistors

AU - Lee, Seung Yong

AU - Choi, Gyoung Rin

AU - Lim, Hyuneui

AU - Lee, Kyung Mi

AU - Lee, Sang Kwon

N1 - Funding Information: This work was supported by Korea Research Foundation Grant funded by Korean Government (Grant No. KRF-2008-005-J00301).

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N2 - We investigate the electronic transport characteristics of an electrolyte-gated conducting polyaniline (PANI) nanowire field-effect transistor (FET) assembled between two Au electrodes on SiO2 /Si substrate using nanochannel-assisted chemical oxidative polymerization. This is the first demonstration that the current-voltage characteristics for a PANI nanowire FET exhibit significant hysteresis, which is typically greater on the positive sweep of the potential than on the negative sweep. We suggest that this hysteresis is due to changes in the PANI structure and the effects of Coulombic repulsion in PANI nanowires on oxidation process. We also present degradation properties of PANI nanowire FETs with electrochemical gate potential.

AB - We investigate the electronic transport characteristics of an electrolyte-gated conducting polyaniline (PANI) nanowire field-effect transistor (FET) assembled between two Au electrodes on SiO2 /Si substrate using nanochannel-assisted chemical oxidative polymerization. This is the first demonstration that the current-voltage characteristics for a PANI nanowire FET exhibit significant hysteresis, which is typically greater on the positive sweep of the potential than on the negative sweep. We suggest that this hysteresis is due to changes in the PANI structure and the effects of Coulombic repulsion in PANI nanowires on oxidation process. We also present degradation properties of PANI nanowire FETs with electrochemical gate potential.

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Electronic transport characteristics of electrolyte-gated conducting polyaniline nanowire field-effect transistors

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