Experimental test of the planar tunneling model for ballistic electron emission spectroscopy

Ian Appelbaum; Rahul Sheth; Ilan Shalish; K. J. Russell; V. Narayanamurti

Experimental test of the planar tunneling model for ballistic electron emission spectroscopy

Ian Appelbaum, Rahul Sheth, Ilan Shalish, K. J. Russell, V. Narayanamurti

Research output: Contribution to journal › Article › peer-review

Abstract

Using planar theory of ballistic electron emission spectroscopy with the addition of scattering at the metal-semiconductor interface, we calculate an expected change in the ratio of the collector current (I_c) to the tunnel current (I_t) as I_t is varied in the well-known system Au/GaAs(100). This alternative spectroscopy is performed experimentally and is shown to differ drastically from the theory, which nevertheless agrees well with standard voltage spectroscopy. From this discrepancy, we question the applicability of one-dimensional (1D) planar theory to an inherently 3D system.

Original language	English (US)
Article number	155307
Pages (from-to)	1553071-1553074
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	15
State	Published - Apr 2003
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Experimental test of the planar tunneling model for ballistic electron emission spectroscopy",

abstract = "Using planar theory of ballistic electron emission spectroscopy with the addition of scattering at the metal-semiconductor interface, we calculate an expected change in the ratio of the collector current (Ic) to the tunnel current (It) as It is varied in the well-known system Au/GaAs(100). This alternative spectroscopy is performed experimentally and is shown to differ drastically from the theory, which nevertheless agrees well with standard voltage spectroscopy. From this discrepancy, we question the applicability of one-dimensional (1D) planar theory to an inherently 3D system.",

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AU - Appelbaum, Ian

AU - Sheth, Rahul

AU - Shalish, Ilan

AU - Russell, K. J.

AU - Narayanamurti, V.

PY - 2003/4

Y1 - 2003/4

N2 - Using planar theory of ballistic electron emission spectroscopy with the addition of scattering at the metal-semiconductor interface, we calculate an expected change in the ratio of the collector current (Ic) to the tunnel current (It) as It is varied in the well-known system Au/GaAs(100). This alternative spectroscopy is performed experimentally and is shown to differ drastically from the theory, which nevertheless agrees well with standard voltage spectroscopy. From this discrepancy, we question the applicability of one-dimensional (1D) planar theory to an inherently 3D system.

AB - Using planar theory of ballistic electron emission spectroscopy with the addition of scattering at the metal-semiconductor interface, we calculate an expected change in the ratio of the collector current (Ic) to the tunnel current (It) as It is varied in the well-known system Au/GaAs(100). This alternative spectroscopy is performed experimentally and is shown to differ drastically from the theory, which nevertheless agrees well with standard voltage spectroscopy. From this discrepancy, we question the applicability of one-dimensional (1D) planar theory to an inherently 3D system.

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M3 - Article

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SN - 0163-1829

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - 155307

ER -

Experimental test of the planar tunneling model for ballistic electron emission spectroscopy

Abstract

ASJC Scopus subject areas

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