@inproceedings{9627c006c1354340b1ddb6c668106679,
title = "First-principles study of electron transport through atomistic metal-oxide-semiconductor structures",
abstract = "We describe a theoretical scheme to combine first-principles molecular dynamics simulation and non-perturbative scattering theory for transport calculations. We compare our approach with published results for electron transport through a single Al atom. The method is then applied to the Si/SiO 2/Si MOS structure, where we analyze the correspondence between the localized defect states and the leakage current. For a 1.04 nm thick MOS structure we calculate a leakage current of 33 A/cm 2, in excellent agreement with a measured value of 19 A/cm 2.",
keywords = "Aluminum, CMOS leakage, Density functional, Device physics, Electron transport, Scattering theory",
author = "Xiaodong Zhang and Leonardo Fonseca and Demkov, {Alexander A.}",
note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 ; Conference date: 21-04-2002 Through 25-04-2002",
year = "2002",
language = "English (US)",
isbn = "0970827563",
series = "2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002",
pages = "322--325",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002",
}