Microwave characteristics of soft magnetic materials: FeZrN thin films and their dependence on nitrogen concentration

A. Chakraborty; A. Khan; P. Dutta; M. S. Seehra

doi:10.1016/j.matlet.2007.07.064

Microwave characteristics of soft magnetic materials: FeZrN thin films and their dependence on nitrogen concentration

A. Chakraborty, A. Khan, P. Dutta, M. S. Seehra

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Ferromagnetic resonance (FMR) studies of FeZrN films prepared by RF sputtering with N₂ partial pressure = 0.05, 0.075, 0.10 and 0.15 are used to determine their microwave characteristics. These room temperature studies at 9.29 GHz and for in-plane orientation of the applied field H show that both the resonance field H_r and the line-width ΔH have 180° symmetry representing uniaxial anisotropy H_k. However with increase in x, H_k decreases but ΔH and H_r increase. The calculated cut-off FMR frequency for H = 0 systematically decreases from 1.62 GHz for x = 0.05 to 1.34 GHz for x = 0.15. This suggests that the film with x = 0.05 has the best overall microwave properties for high-frequency applications.

Original language	English (US)
Pages (from-to)	970-972
Number of pages	3
Journal	Materials Letters
Volume	62
Issue number	6-7
DOIs	https://doi.org/10.1016/j.matlet.2007.07.064
State	Published - Mar 15 2008
Externally published	Yes

Keywords

Coercivity
Ferromagnetic resonance
Magnetic recording
Magnetic thin films
Sputtering

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2007.07.064

Cite this

@article{c691d667f64f4d2bb0ac6711bc03967a,

title = "Microwave characteristics of soft magnetic materials: FeZrN thin films and their dependence on nitrogen concentration",

abstract = "Ferromagnetic resonance (FMR) studies of FeZrN films prepared by RF sputtering with N2 partial pressure = 0.05, 0.075, 0.10 and 0.15 are used to determine their microwave characteristics. These room temperature studies at 9.29 GHz and for in-plane orientation of the applied field H show that both the resonance field Hr and the line-width ΔH have 180° symmetry representing uniaxial anisotropy Hk. However with increase in x, Hk decreases but ΔH and Hr increase. The calculated cut-off FMR frequency for H = 0 systematically decreases from 1.62 GHz for x = 0.05 to 1.34 GHz for x = 0.15. This suggests that the film with x = 0.05 has the best overall microwave properties for high-frequency applications.",

keywords = "Coercivity, Ferromagnetic resonance, Magnetic recording, Magnetic thin films, Sputtering",

author = "A. Chakraborty and A. Khan and P. Dutta and Seehra, {M. S.}",

note = "Funding Information: This work was supported in part by the National Science Foundation under Grant No. ECD-8907068. The FMR measurements were performed at West Virginia University. Special thanks to Dr. M. E. Kordesch, Department of Physics and Astronomy, Ohio University, for his valuable suggestions preparing this manuscript. ",

year = "2008",

month = mar,

day = "15",

doi = "10.1016/j.matlet.2007.07.064",

language = "English (US)",

volume = "62",

pages = "970--972",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "6-7",

}

TY - JOUR

T1 - Microwave characteristics of soft magnetic materials

T2 - FeZrN thin films and their dependence on nitrogen concentration

AU - Chakraborty, A.

AU - Khan, A.

AU - Dutta, P.

AU - Seehra, M. S.

N1 - Funding Information: This work was supported in part by the National Science Foundation under Grant No. ECD-8907068. The FMR measurements were performed at West Virginia University. Special thanks to Dr. M. E. Kordesch, Department of Physics and Astronomy, Ohio University, for his valuable suggestions preparing this manuscript.

PY - 2008/3/15

Y1 - 2008/3/15

N2 - Ferromagnetic resonance (FMR) studies of FeZrN films prepared by RF sputtering with N2 partial pressure = 0.05, 0.075, 0.10 and 0.15 are used to determine their microwave characteristics. These room temperature studies at 9.29 GHz and for in-plane orientation of the applied field H show that both the resonance field Hr and the line-width ΔH have 180° symmetry representing uniaxial anisotropy Hk. However with increase in x, Hk decreases but ΔH and Hr increase. The calculated cut-off FMR frequency for H = 0 systematically decreases from 1.62 GHz for x = 0.05 to 1.34 GHz for x = 0.15. This suggests that the film with x = 0.05 has the best overall microwave properties for high-frequency applications.

AB - Ferromagnetic resonance (FMR) studies of FeZrN films prepared by RF sputtering with N2 partial pressure = 0.05, 0.075, 0.10 and 0.15 are used to determine their microwave characteristics. These room temperature studies at 9.29 GHz and for in-plane orientation of the applied field H show that both the resonance field Hr and the line-width ΔH have 180° symmetry representing uniaxial anisotropy Hk. However with increase in x, Hk decreases but ΔH and Hr increase. The calculated cut-off FMR frequency for H = 0 systematically decreases from 1.62 GHz for x = 0.05 to 1.34 GHz for x = 0.15. This suggests that the film with x = 0.05 has the best overall microwave properties for high-frequency applications.

KW - Coercivity

KW - Ferromagnetic resonance

KW - Magnetic recording

KW - Magnetic thin films

KW - Sputtering

UR - http://www.scopus.com/inward/record.url?scp=37349043911&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37349043911&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2007.07.064

DO - 10.1016/j.matlet.2007.07.064

M3 - Article

AN - SCOPUS:37349043911

SN - 0167-577X

VL - 62

SP - 970

EP - 972

JO - Materials Letters

JF - Materials Letters

IS - 6-7

ER -

Microwave characteristics of soft magnetic materials: FeZrN thin films and their dependence on nitrogen concentration

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this