TY - GEN
T1 - Optimization of ballasted carbon nanotube array for X-ray source
AU - Sun, Yonghai
AU - Yeow, John T.W.
AU - Jaffray, David A.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - Ballast resistor under layer can improve reliability and stability of field emission cathode. Utilization of ballast resistor in Spindt cathode has been studied thoroughly. However, due to the significant difference between the Spindt cathode and CNT (carbon nanotube) emitter, studies of ballasted CNT emitter array are rare. Ballasted CNT emitter array has been demonstrated in our early studies. In this article, we use the finite element method to analyses the effect of the geometry parameters of the emission array. Optimized parameters, for example: intertube pitch, connection pad diameter, resistor layer thickness, and height of the CNT, are calculated. These optimized parameters are suitable for ballasted CNT emitter arrays for flat panel X-ray sources.
AB - Ballast resistor under layer can improve reliability and stability of field emission cathode. Utilization of ballast resistor in Spindt cathode has been studied thoroughly. However, due to the significant difference between the Spindt cathode and CNT (carbon nanotube) emitter, studies of ballasted CNT emitter array are rare. Ballasted CNT emitter array has been demonstrated in our early studies. In this article, we use the finite element method to analyses the effect of the geometry parameters of the emission array. Optimized parameters, for example: intertube pitch, connection pad diameter, resistor layer thickness, and height of the CNT, are calculated. These optimized parameters are suitable for ballasted CNT emitter arrays for flat panel X-ray sources.
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U2 - 10.1109/NANO.2013.6720798
DO - 10.1109/NANO.2013.6720798
M3 - Conference contribution
AN - SCOPUS:84894213036
SN - 9781479906758
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 389
EP - 392
BT - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
T2 - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Y2 - 5 August 2013 through 8 August 2013
ER -