TY - GEN
T1 - Simulation of field emission current uniformity of low-density freestanding CNT array
AU - Sun, Yonghai
AU - Yeow, John T.W.
AU - Jaffray, David A.
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - Field electron emission (FEE) from carbon nanotube (CNT) array has been widely studied, but improving the uniformity of emission current from a CNT emitter array remains a challenge. In this paper, the uniformity of a freestanding CNT array is simulated. Field enhancement factor (β), electrical field strength at the tip and emission current density of CNTs is calculated. A simple ballast resistor array, like the resistor layer in conventional Spindt cathodes, is utilized. The voltage drops on the resistors and the emission currents form corresponding CNTs are also calculated. Simulation results show that to achieve a reasonable total emission current, emission current from individual CNTs with ballast resistor are much lower than the current from a favorable CNT without the ballast resistor.
AB - Field electron emission (FEE) from carbon nanotube (CNT) array has been widely studied, but improving the uniformity of emission current from a CNT emitter array remains a challenge. In this paper, the uniformity of a freestanding CNT array is simulated. Field enhancement factor (β), electrical field strength at the tip and emission current density of CNTs is calculated. A simple ballast resistor array, like the resistor layer in conventional Spindt cathodes, is utilized. The voltage drops on the resistors and the emission currents form corresponding CNTs are also calculated. Simulation results show that to achieve a reasonable total emission current, emission current from individual CNTs with ballast resistor are much lower than the current from a favorable CNT without the ballast resistor.
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U2 - 10.1109/NANO.2010.5697943
DO - 10.1109/NANO.2010.5697943
M3 - Conference contribution
AN - SCOPUS:79951835415
SN - 9781424470334
T3 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
SP - 836
EP - 840
BT - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
T2 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
Y2 - 17 August 2010 through 20 August 2010
ER -