Steps on the (001) SrTiO3 surface

Xiaodong Zhang; Alexander A. Demkov

doi:10.1116/1.1496513

Steps on the (001) SrTiO₃ surface

Xiaodong Zhang, Alexander A. Demkov

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

The flat STO surface and STO surface with a half unit cell high step were theoretically studied. It was found that the stepped STO surface prefers the O step edge under extremely oxygen rich conditions and Sr or TiO edge under extremely oxygen deficient conditions.

Original language	English (US)
Pages (from-to)	1664-1670
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1496513
State	Published - Jul 2002
Externally published	Yes
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1496513

Cite this

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title = "Steps on the (001) SrTiO3 surface",

abstract = "The flat STO surface and STO surface with a half unit cell high step were theoretically studied. It was found that the stepped STO surface prefers the O step edge under extremely oxygen rich conditions and Sr or TiO edge under extremely oxygen deficient conditions.",

author = "Xiaodong Zhang and Demkov, {Alexander A.}",

year = "2002",

month = jul,

doi = "10.1116/1.1496513",

language = "English (US)",

volume = "20",

pages = "1664--1670",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

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T1 - Steps on the (001) SrTiO3 surface

AU - Zhang, Xiaodong

AU - Demkov, Alexander A.

PY - 2002/7

Y1 - 2002/7

N2 - The flat STO surface and STO surface with a half unit cell high step were theoretically studied. It was found that the stepped STO surface prefers the O step edge under extremely oxygen rich conditions and Sr or TiO edge under extremely oxygen deficient conditions.

AB - The flat STO surface and STO surface with a half unit cell high step were theoretically studied. It was found that the stepped STO surface prefers the O step edge under extremely oxygen rich conditions and Sr or TiO edge under extremely oxygen deficient conditions.

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DO - 10.1116/1.1496513

M3 - Conference article

AN - SCOPUS:0035982599

SN - 1071-1023

VL - 20

SP - 1664

EP - 1670

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Steps on the (001) SrTiO₃ surface

Abstract

ASJC Scopus subject areas

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