Abstract
The dynamic process of the thermal distortion of the silicon mirror has been studied theoretically and experimentally. The displacement of the surface of the silicon mirror is varying rapidly in the beginning of the distortion. When the power of the incident laser is 200W and the absorptivity of the silicon mirror is 70%, after two seconds the deflection of the mirror (φ70×8nm) induced by thermal stresses reaches 0.76μm already. Therefore it is not a negligible problem for the high power short wavelength laser.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 688-692 |
| Number of pages | 5 |
| Journal | Zhongguo Jiguang/Chinese Journal of Lasers |
| Volume | 24 |
| Issue number | 8 |
| State | Published - Aug 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering