The interface of epitaxial SrTiO3 on silicon: In situ and ex situ studies

Xiaoming Hu; H. Li; Y. Liang; Y. Wei; Z. Yu; D. Marshall; J. Edwards; R. Droopad; X. Zhang; A. A. Demkov; K. Moore; J. Kulik

doi:10.1063/1.1536247

The interface of epitaxial SrTiO₃ on silicon: In situ and ex situ studies

Xiaoming Hu, H. Li, Y. Liang, Y. Wei, Z. Yu, D. Marshall, J. Edwards, R. Droopad, X. Zhang, A. A. Demkov, K. Moore, J. Kulik

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Abstract

The formation of interfacial layers between silicon and overgrown epitaxial SrTiO₃ as a function of growth temperature was studied. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy were used for the study. Models for the chemical compositions and atomic bonding states were developed. The molecular-beam epitaxy growth process could be controlled to form high-quality, single crystalline oxide films and a desired interface between the grown oxide and silicon substrate.

Original language	English (US)
Pages (from-to)	203-205
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	2
DOIs	https://doi.org/10.1063/1.1536247
State	Published - Jan 13 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1536247

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abstract = "The formation of interfacial layers between silicon and overgrown epitaxial SrTiO3 as a function of growth temperature was studied. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy were used for the study. Models for the chemical compositions and atomic bonding states were developed. The molecular-beam epitaxy growth process could be controlled to form high-quality, single crystalline oxide films and a desired interface between the grown oxide and silicon substrate.",

author = "Xiaoming Hu and H. Li and Y. Liang and Y. Wei and Z. Yu and D. Marshall and J. Edwards and R. Droopad and X. Zhang and Demkov, {A. A.} and K. Moore and J. Kulik",

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AU - Hu, Xiaoming

AU - Li, H.

AU - Liang, Y.

AU - Wei, Y.

AU - Yu, Z.

AU - Marshall, D.

AU - Edwards, J.

AU - Droopad, R.

AU - Zhang, X.

AU - Demkov, A. A.

AU - Moore, K.

AU - Kulik, J.

PY - 2003/1/13

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N2 - The formation of interfacial layers between silicon and overgrown epitaxial SrTiO3 as a function of growth temperature was studied. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy were used for the study. Models for the chemical compositions and atomic bonding states were developed. The molecular-beam epitaxy growth process could be controlled to form high-quality, single crystalline oxide films and a desired interface between the grown oxide and silicon substrate.

AB - The formation of interfacial layers between silicon and overgrown epitaxial SrTiO3 as a function of growth temperature was studied. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy were used for the study. Models for the chemical compositions and atomic bonding states were developed. The molecular-beam epitaxy growth process could be controlled to form high-quality, single crystalline oxide films and a desired interface between the grown oxide and silicon substrate.

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The interface of epitaxial SrTiO₃ on silicon: In situ and ex situ studies

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