Theoretical investigation of ultrathin gate dielectrics

Alexander A. Demkov; Xiaodong Zhang; Heather Loechelt

doi:10.1155/2001/98032

Theoretical investigation of ultrathin gate dielectrics

Alexander A. Demkov, Xiaodong Zhang, Heather Loechelt

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO₂-Si and Si-SiON-SiO₂-Si model metal-oxide-semiconductor (MOS) structures. We discuss methods to estimate the valence band discontinuity at the corresponding interface. We use Landauer's ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers.

Original language	English (US)
Pages (from-to)	135-143
Number of pages	9
Journal	VLSI Design
Volume	13
Issue number	1-4
DOIs	https://doi.org/10.1155/2001/98032
State	Published - 2001
Externally published	Yes

Keywords

Electronic structure
Gate dielectrics
Oxynitrides
Quantum transport

ASJC Scopus subject areas

Hardware and Architecture
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

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10.1155/2001/98032

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title = "Theoretical investigation of ultrathin gate dielectrics",

abstract = "We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO2-Si and Si-SiON-SiO2-Si model metal-oxide-semiconductor (MOS) structures. We discuss methods to estimate the valence band discontinuity at the corresponding interface. We use Landauer's ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers.",

keywords = "Electronic structure, Gate dielectrics, Oxynitrides, Quantum transport",

author = "Demkov, {Alexander A.} and Xiaodong Zhang and Heather Loechelt",

year = "2001",

doi = "10.1155/2001/98032",

language = "English (US)",

volume = "13",

pages = "135--143",

journal = "VLSI Design",

issn = "1065-514X",

publisher = "Hindawi Publishing Corporation",

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TY - JOUR

T1 - Theoretical investigation of ultrathin gate dielectrics

AU - Demkov, Alexander A.

AU - Zhang, Xiaodong

AU - Loechelt, Heather

PY - 2001

Y1 - 2001

N2 - We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO2-Si and Si-SiON-SiO2-Si model metal-oxide-semiconductor (MOS) structures. We discuss methods to estimate the valence band discontinuity at the corresponding interface. We use Landauer's ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers.

AB - We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO2-Si and Si-SiON-SiO2-Si model metal-oxide-semiconductor (MOS) structures. We discuss methods to estimate the valence band discontinuity at the corresponding interface. We use Landauer's ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers.

KW - Electronic structure

KW - Gate dielectrics

KW - Oxynitrides

KW - Quantum transport

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U2 - 10.1155/2001/98032

DO - 10.1155/2001/98032

M3 - Article

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SP - 135

EP - 143

JO - VLSI Design

JF - VLSI Design

IS - 1-4

ER -

Theoretical investigation of ultrathin gate dielectrics

Abstract

Keywords

ASJC Scopus subject areas

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