Two-dimensional growth of high-quality strontium titanate thin films on Si

H. Li; X. Hu; Y. Wei; Z. Yu; X. Zhang; R. Droopad; A. A. Demkov; J. Edwards; K. Moore; W. Ooms; J. Kulik; P. Fejes

doi:10.1063/1.1562001

Two-dimensional growth of high-quality strontium titanate thin films on Si

H. Li, X. Hu, Y. Wei, Z. Yu, X. Zhang, R. Droopad, A. A. Demkov, J. Edwards, K. Moore, W. Ooms, J. Kulik, P. Fejes

Research output: Contribution to journal › Article › peer-review

137 Scopus citations

Abstract

The two-dimensional growth of high-quality strontium titanate thin films on Si was discussed. A stepped growth method that utilizes the kinetic characteristics of the growth process to suppress the oxidation of the substrate surface was analyzed. The epitaxy of high-quality SrTiO₃ (STO) thin films directly on Si was achieved and the chemical and structural properties of the STO/Si interface were evaluated.

Original language	English (US)
Pages (from-to)	4521-4525
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.1562001
State	Published - Apr 15 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1562001

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abstract = "The two-dimensional growth of high-quality strontium titanate thin films on Si was discussed. A stepped growth method that utilizes the kinetic characteristics of the growth process to suppress the oxidation of the substrate surface was analyzed. The epitaxy of high-quality SrTiO3 (STO) thin films directly on Si was achieved and the chemical and structural properties of the STO/Si interface were evaluated.",

author = "H. Li and X. Hu and Y. Wei and Z. Yu and X. Zhang and R. Droopad and Demkov, {A. A.} and J. Edwards and K. Moore and W. Ooms and J. Kulik and P. Fejes",

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AU - Li, H.

AU - Hu, X.

AU - Wei, Y.

AU - Yu, Z.

AU - Zhang, X.

AU - Droopad, R.

AU - Demkov, A. A.

AU - Edwards, J.

AU - Moore, K.

AU - Ooms, W.

AU - Kulik, J.

AU - Fejes, P.

PY - 2003/4/15

Y1 - 2003/4/15

N2 - The two-dimensional growth of high-quality strontium titanate thin films on Si was discussed. A stepped growth method that utilizes the kinetic characteristics of the growth process to suppress the oxidation of the substrate surface was analyzed. The epitaxy of high-quality SrTiO3 (STO) thin films directly on Si was achieved and the chemical and structural properties of the STO/Si interface were evaluated.

AB - The two-dimensional growth of high-quality strontium titanate thin films on Si was discussed. A stepped growth method that utilizes the kinetic characteristics of the growth process to suppress the oxidation of the substrate surface was analyzed. The epitaxy of high-quality SrTiO3 (STO) thin films directly on Si was achieved and the chemical and structural properties of the STO/Si interface were evaluated.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Two-dimensional growth of high-quality strontium titanate thin films on Si

Abstract

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