Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy

A. A. Demkov; H. Seo; X. Zhang; J. Ramdani

doi:10.1063/1.3685508

Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy

A. A. Demkov, H. Seo, X. Zhang, J. Ramdani

Radiation Physics

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We propose using the Zintl-Klemm (Z-K) bonding to engineer transition layers that provide wetting between ionic oxides and covalent semiconductors to ensure two-dimensional epitaxial growth. Using density functional theory to test this concept, we consider the thermodynamics of wetting at the GaAs/SrTiO ₃ interface, and identify Sr aluminide SrAl ₂ as the Z-K wetting layer. We discuss the atomic structure and bonding at the interface, and estimate the conduction band discontinuity to be 0.6 eV, in good agreement with recent experiment.

Original language	English (US)
Article number	071602
Journal	Applied Physics Letters
Volume	100
Issue number	7
DOIs	https://doi.org/10.1063/1.3685508
State	Published - Feb 13 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3685508

Cite this

@article{21a5ff691b4645a0a4234abb9e33ed62,

title = "Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy",

abstract = "We propose using the Zintl-Klemm (Z-K) bonding to engineer transition layers that provide wetting between ionic oxides and covalent semiconductors to ensure two-dimensional epitaxial growth. Using density functional theory to test this concept, we consider the thermodynamics of wetting at the GaAs/SrTiO 3 interface, and identify Sr aluminide SrAl 2 as the Z-K wetting layer. We discuss the atomic structure and bonding at the interface, and estimate the conduction band discontinuity to be 0.6 eV, in good agreement with recent experiment.",

author = "Demkov, {A. A.} and H. Seo and X. Zhang and J. Ramdani",

note = "Funding Information: We thank Agham Posadas and Alex Slepko for a critical reading of the manuscript. This work is supported by the National Science Foundation under CAREER Grant DMR-0548182, DMR-1006725, the US Department of Energy (DOE) under Grant DE-SC0001878, and Texas Advanced Computing Center. ",

year = "2012",

month = feb,

day = "13",

doi = "10.1063/1.3685508",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy

AU - Demkov, A. A.

AU - Seo, H.

AU - Zhang, X.

AU - Ramdani, J.

N1 - Funding Information: We thank Agham Posadas and Alex Slepko for a critical reading of the manuscript. This work is supported by the National Science Foundation under CAREER Grant DMR-0548182, DMR-1006725, the US Department of Energy (DOE) under Grant DE-SC0001878, and Texas Advanced Computing Center.

PY - 2012/2/13

Y1 - 2012/2/13

N2 - We propose using the Zintl-Klemm (Z-K) bonding to engineer transition layers that provide wetting between ionic oxides and covalent semiconductors to ensure two-dimensional epitaxial growth. Using density functional theory to test this concept, we consider the thermodynamics of wetting at the GaAs/SrTiO 3 interface, and identify Sr aluminide SrAl 2 as the Z-K wetting layer. We discuss the atomic structure and bonding at the interface, and estimate the conduction band discontinuity to be 0.6 eV, in good agreement with recent experiment.

AB - We propose using the Zintl-Klemm (Z-K) bonding to engineer transition layers that provide wetting between ionic oxides and covalent semiconductors to ensure two-dimensional epitaxial growth. Using density functional theory to test this concept, we consider the thermodynamics of wetting at the GaAs/SrTiO 3 interface, and identify Sr aluminide SrAl 2 as the Z-K wetting layer. We discuss the atomic structure and bonding at the interface, and estimate the conduction band discontinuity to be 0.6 eV, in good agreement with recent experiment.

UR - http://www.scopus.com/inward/record.url?scp=84863115531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863115531&partnerID=8YFLogxK

U2 - 10.1063/1.3685508

DO - 10.1063/1.3685508

M3 - Article

AN - SCOPUS:84863115531

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071602

ER -

Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this